首页> 外文OA文献 >Renormalization-group approach to the metal-insulator transitions in (DCNQI)_2M (DCNQI is N,N'-dicyanoquinonediimine and M=Ag, Cu)
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Renormalization-group approach to the metal-insulator transitions in (DCNQI)_2M (DCNQI is N,N'-dicyanoquinonediimine and M=Ag, Cu)

机译:重整化群方法中的金属 - 绝缘体转变   (DCNQI)_2m(DCNQI是N,N'-二氰基醌二亚胺,m = ag,Cu)

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摘要

Metal-insulator transitions and different ground-state phases in quasi-one-dimensional materials, (R_1R_2-DCNQI)_2M (R_1=R_2=CH_3, I and M=Ag, Cu), arestudied with a renormalization-group method. We use one-dimensional continuummodels with backward scatterings, umklapp processes and couplings with 2k_F and4k_F phonons (not static lattice distortion). We take a quarter- filled bandfor M=Ag and a sixth-filled band coupled with a third-filled band for M=Cu.Depending on electron-electron and electron-phonon coupling strengths, theground-state phase becomes a Tomonaga-Luttinger liquid or a state with agap(s). For M=Ag, there appear a spin-gap state with a dominant 2k_Fcharge-density-wave correlation, a Mott insulator with a dominant 4k_Fcharge-density-wave correlation, or a spin-Peierls state with differentmagnitudes of spin and charge gaps. Three-dimensionality is taken into accountby cutting off the logarithmic singularity in either the particle-particlechannel or the particle-hole channel. The difference between the ground-statephase of the R_1=R_2=CH_3 salt (spin-Peierls state) and that of the R_1=R_2=Isalt (antiferromagnetic state) is qualitatively explained by a difference inthe cutoff energy in the particle-particle channel. For M=Cu, there appear aMott insulator with a charge density wave of period 3 and a Peierls insulatorwith a charge density wave of period 6. The conditions for the experimentallyobserved, Mott insulator phase are strong correlation in the sixth-filled band,moderate electron-phonon couplings, and finite electron-4k_F phonon coupling.Resistance is calculated as a function of temperature with a memory-functionapproximation in both cases above. It qualitatively reproduces the differencesamong the M=Ag and M=Cu cases as well as the R_1=R_2=CH_3 and R_1=R_2=I cases.
机译:使用重归一化组方法研究了准一维材料(R_1R_2-DCNQI)_2M(R_1 = R_2 = CH_3,I和M = Ag,Cu)中的金属绝缘体过渡和不同的基态相。我们使用一维连续介质模型,该模型具有向后散射,umklapp过程以及2k_F和4k_F声子的耦合(不是静态晶格畸变)。对于M = Ag,我们采用四分之一填充带,对于M = Cu,我们采用第六填充带与第三填充带耦合。根据电子-电子和电子-声子的耦合强度,基态相成为Tomonaga-Luttinger液体或存在agap的州。对于M = Ag,将出现具有主导2k_Fcharge-密度-波相关性的自旋间隙状态,具有主导4k_Fcharge-密度-波相关性的Mott绝缘子,或具有不同自旋和电荷隙幅度的自旋-Peierls状态。通过切除粒子-粒子通道或粒子-孔通道中的对数奇点,可以将三维考虑在内。定性地解释了R_1 = R_2 = CH_3盐的基态相(自旋Peierls状态)和R_1 ​​= R_2 = Isalt的基态相(反铁磁态)之间的差异。对于M = Cu,出现一个Mott绝缘子,其电荷密度波为周期3;一个Peierls绝缘子,其电荷密度波为周期6。实验观察到的Mott绝缘子相的条件与第六填充带中的强相关性,中等电子声子耦合和有限电子4k_F声子耦合。在以上两种情况下,电阻均以温度为函数进行计算,并具有记忆函数近似值。它定性地再现了M = Ag和M = Cu情况以及R_1 = R_2 = CH_3和R_1 ​​= R_2 = I情况之间的差异。

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  • 作者

    Yonemitsu, K.;

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  • 年度 1997
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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